Automotive-Grade Power Modules

GEENER SiC modules feature full-bridge, half-bridge and discrete circuit configurations, designed for high-current, high-power and high-switching-frequency applications, widely used in new energy vehicles. They support 750V and 1200V voltage classes, with high reliability, low switching loss, high blocking voltage and high operating junction temperature.Featuring advanced top-side interconnection technologies including DTS, Cu-CLIP and SPACER, GEENER SiC modules deliver excellent electrical and thermal performance. Silver sintering technology is adopted to enhance bonding quality and reliability.These SiC MOSFET modules are ideal for automotive e-drive, EV chargers and PV inverters, enabling more efficient and stable power electronic systems.

Power chip
Discrete
- LVMOS
- HVMOS
- IGBT
- SiC
- Diode
Power Module
- Automotive-Grade Power Modules
- Industrial-Grade Power Modules

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VCES (V)+D1:K1
- 1200
- 750
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IC (A)
- 200
- 250
- 270
- 350
- 360
- 390
- 400
- 430
- 440
- 450
- 500
- 510
- 540
- 550
- 600
- 650
- 700
- 800
- 820
- 1000
- 1400
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Technology
- EDT2
- EDT3
- 平面SIC mos
- 沟槽SIC mos
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Configruation
- 单管
- 全桥 Full Bridge
- 半桥 Half Bridge
- 3 level
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Features
- 椭圆基板
- 圆形基板
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VCE (sat) (V)
- 0.91
- 1.16
- 1.2
- 1.36
- 1.4
- 1.45
- 1.51
- 1.52
- 1.54
- 1.55
- 1.58
- 1.64
- 0.94mΩ
- 1.1mΩ
- 1.4mΩ
- 1.8mΩ
- 1.9mΩ
- 2.25mΩ
- 2.8mΩ
- 2.9mΩ
- 5.5mΩ
- 8mΩ
Reset filters
RthJC (K/W)
- 0.069
- 0.075
- 0.08
- 0.09
- 0.093
- 0.1
- 0.106
- 0.11
- 0.113
- 0.115
- 0.117
- 0.12
- 0.128
- 0.13
- 0.143
- 0.155
- 0.163
- 0.185
Reset filters
Packages
- H1
- H7A
- H8
- M1
- M2
- M4B
- R1
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Product Name
Compare

Show all

VCES (V)+D1:K1
1200

750

Reset filters
IC (A)
200

250

270

350

360

390

400

430

440

450

500

510

540

550

600

650

700

800

820

1000

1400

Reset filters
Technology
EDT2

EDT3

平面SIC mos

沟槽SIC mos

Reset filters
Configruation
单管

全桥 Full Bridge

半桥 Half Bridge

3 level

Reset filters
Features
椭圆基板

圆形基板

Reset filters
VCE (sat) (V)
0.91

1.16

1.2

1.36

1.4

1.45

1.51

1.52

1.54

1.55

1.58

1.64

0.94mΩ

1.1mΩ

1.4mΩ

1.8mΩ

1.9mΩ

2.25mΩ

2.8mΩ

2.9mΩ

5.5mΩ

8mΩ

Reset filters
RthJC (K/W)
0.069

0.075

0.08

0.09

0.093

0.1

0.106

0.11

0.113

0.115

0.117

0.12

0.128

0.13

0.143

0.155

0.163

0.185

Reset filters
Packages
H1

H7A

H8

M1

M2

M4B

R1

Reset filters

1200

270

平面SiC MOS

半桥 Half Bridge

/

5.5mΩ

/

M4B
1200

400

EDT2

3 level

/

1.64

0.117

R1
750

820

EDT2

全桥 Full Bridge

椭圆基板

1.4

0.11

H1
1200

440

平面SiC MOS

半桥 Half Bridge

/

2.8mΩ

/

M4B
750

390

沟槽SiC MOS

全桥 Full Bridge

椭圆基板

2.8mΩ

H8
1200

430

沟槽SiC MOS

全桥 Full Bridge

椭圆基板

2.9mΩ

H8
1200

540

平面SiC MOS

全桥 Full Bridge

椭圆基板

2.8mΩ

/

H8B
1200

400

EDT3

全桥 Full Bridge

椭圆基板

1.52

/

H8B
1200

500

平面SiC MOS

全桥 Full Bridge

椭圆基板

2.8mΩ

0.143

H1
1200

650

平面SiC MOS

全桥 Full Bridge

椭圆基板

2.25mΩ

0.128

H1
1200

800

平面SiC MOS

全桥 Full Bridge

椭圆基板

1.9mΩ

0.115

H1
1200

1000

平面SiC MOS

全桥 Full Bridge

椭圆基板

1.4mΩ

/

H1
1200

1000

平面SiC MOS

全桥 Full Bridge

椭圆基板

1.4mΩ

0.106

H1
1200

1400

平面SiC MOS

全桥 Full Bridge

椭圆基板

1.1mΩ

0.09

H1
1200

600

EDT3

全桥 Full Bridge

椭圆基板

1.58

0.12

H1
1200

600

EDT3

全桥 Full Bridge

椭圆基板

1.58

0.1

H1
1200

450

EDT3

全桥 Full Bridge

椭圆基板

1.54

0.12

H1
750

600

EDT2

全桥 Full Bridge

圆形基板

1.55

0.155

H1
1200

800

平面SiC MOS

全桥 Full Bridge

椭圆基板

1.9mΩ

0.115

H1

GS28NHB12M4B7
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI400MT12R18P
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI820FB08H14B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS28NHB12M4B7
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS28SFB08H8C4LM
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS29SFB12H8C4LM
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS28NFB12H8B3LB
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI400FB12H8B3LB
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS28NFB12H1A4(L)B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS22NFB12H1A4(L)B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS19NFB12H1A4(L)B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS14NFB12H1A4(L)B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS14NFB12H1D4
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS11NFB12H1D4
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI600FB12H1C3B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI600FB12H13B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI450FB12H13B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GI600FB08H11B
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1
GS19NFB12H1A4LB
- VCES (V)+D1:K1:
  
  1200
- IC (A):
  
  800
- Technology:
  
  平面SiC MOS
- Configruation:
  
  全桥 Full Bridge
- Features:
  
  椭圆基板
- VCE (sat) (V):
  
  1.9mΩ
- RthJC (K/W):
  
  0.115
- Packages:
  
  H1

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