GS29SFB12H8C4LM
H8B SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 430 |
| Technology | 沟槽SiC MOS |
| Configruation | 全桥 Full Bridge |
| Features | 椭圆基板 |
| VCE (sat)(V) | 2.9mΩ |
| RthJC (K/W) | |
| Packages | H8 |
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