GS28NHB12M4B7
M4B SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 270 |
| Technology | PlanarSiC MOS |
| Configruation | Half Bridge |
| Features | / |
| VCE (sat)(V) | 5.5mΩ |
| RthJC (K/W) | / |
| Packages | M4B |
Industry Applications
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