GS19NFB12H1A4LB
H1 SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 800 |
| Technology | SiC MOS |
| Configruation | Full Bridge |
| Features | Elliptical Substrate |
| VCE (sat)(V) | 1.9mΩ |
| RthJC (K/W) | 0.115 |
| Packages | H1 |
Industry Applications
Powering the New Energy Era with Quality Chips.
We provide innovative solutions across materials, chips and modules.
