HVMOS

Planar VDMOS and SJ MOSFET series are high-voltage power devices designed specifically for high-voltage power electronic systems.They deliver outstanding performance and reliability in industrial power supplies, new energy, electric vehicles, and industrial motor control, meeting the demands of various high-end applications. These series feature excellent voltage margin and extremely low power dissipation, enabling higher system efficiency, longer service life, and lower total cost of ownership.They satisfy stringent application requirements and hold a distinct competitive advantage in the marketplace.

Power chip
Discrete
- LVMOS
- HVMOS
- IGBT
- SiC
- Diode
Power Module
- Automotive-Grade Power Modules
- Industrial-Grade Power Modules

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Voltage Range
- N-200V
- N-500V
- N-600V
- N-650V
Reset filters
Package
- PDFN5*6
- TO-220
- TO-220F
- TO-247
- TO-252
- TO-262
- TO-263
- TOLL
Reset filters
Chip Process
- Planar
- SJ
Reset filters
VDS_max (V)
- 200
- 500
- 600
- 650
Reset filters
ID (A)
- 4
- 4.5
- 7
- 8
- 10
- 10.5
- 12
- 13
- 18
- 20
- 30
- 40
- 48
- 55
- 71
Reset filters
VTH (V)
- 2.9
- 3
- 3.3
- 3.4
- 3.7
- 3.8
- 4
Reset filters
RDS(ON)@VGE=10V Typ (Ω)
- 0.039
- 0.052
- 0.056
- 0.058
- 0.073
- 0.103
- 0.26
- 0.3
- 0.332
- 0.34
- 0.38
- 0.568
- 0.58
- 0.592
- 0.65
- 0.80
- 0.873
- 0.89
- 0.892
- 1.2
- 2.3
Reset filters
RDS(ON)@VGE=10V Max (Ω)
- 0.043
- 0.065
- 0.068
- 0.07
- 0.09
- 0.11
- 0.31
- 0.38
- 0.42
- 0.49
- 0.65
- 0.80
- 0.95
- 1.00
- 1.35
- 2.6
Reset filters

Product Name
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Voltage Range
N-200V

N-500V

N-600V

N-650V

Reset filters
Package
PDFN5*6

TO-220

TO-220F

TO-247

TO-252

TO-262

TO-263

TOLL

Reset filters
Chip Process
Planar

SJ

Reset filters
VDS_max (V)
200

500

600

650

Reset filters
ID (A)
4

4.5

7

8

10

10.5

12

13

18

20

30

40

48

55

71

Reset filters
VTH (V)
2.9

3

3.3

3.4

3.7

3.8

4

Reset filters
RDS(ON)@VGE=10V Typ (Ω)
0.039

0.052

0.056

0.058

0.073

0.103

0.26

0.3

0.332

0.34

0.38

0.568

0.58

0.592

0.65

0.80

0.873

0.89

0.892

1.2

2.3

Reset filters
RDS(ON)@VGE=10V Max (Ω)
0.043

0.065

0.068

0.07

0.09

0.11

0.31

0.38

0.42

0.49

0.65

0.80

0.95

1.00

1.35

2.6

Reset filters

650V

TO-220F

SJ

650

30

3.3

0.103

0.11
650V

TO-220F

SJ

650

10.5

3

0.34

0.38
650V

TO-252

SJ

650

10.5

3

0.34

0.38
650V

TO-263

SJ

650

10.5

3

0.332

0.38
650V

TO-220

SJ

650

10.5

3

0.332

0.38
650V

TO-252

SJ

650

8

3

0.592

0.65
650V

TO-220F

SJ

650

8

3

0.58

0.65
650V

TO-220

SJ

650

8

3

0.568

0.65
650V

TO-252

SJ

650

4.5

3

0.892

0.95
650V

TO-220F

SJ

650

4.5

3

0.89

0.95
650V

TO-220

SJ

650

4.5

3

0.873

0.95
600V

TOLL

SJ

600

71

4

0.039

0.043
600V

TOLL

SJ

600

55

3.8

0.058

0.065
600V

TO-247

SJ

600

48

4

0.056

0.068
600V

TO-220F

SJ

600

40

4

0.073

0.09
650V

TO-263

Planar

650

20

3

0.3

0.42
650V

TO-220

Planar

650

20

3

0.3

0.42
650V

TO-263

Planar

650

12

2.9

0.65

0.8
650V

TO-220

Planar

650

12

2.9

0.65

0.8
650V

TO-263

Planar

650

10

3.7

0.8

1
650V

TO-220

Planar

650

10

3.7

0.8

1
650V

TO-262

Planar

650

7

3

1.2

1.35
650V

TO-263

Planar

650

7

3

1.2

1.35
650V

TO-220

Planar

650

7

3

1.2

1.35
650V

TO-252

Planar

650

4

3.4

2.3

2.6
650V

TO-263

Planar

650

4

3.4

2.3

2.6
650V

TO-220

Planar

650

4

3.4

2.3

2.6
500V

TO-247

Planar

500

18

3

0.26

0.31
500V

TO-263

Planar

500

18

3

0.26

0.31
500V

TO-220

Planar

500

18

3

0.26

0.31
500V

TO-247

Planar

500

13

3

0.38

0.49
500V

TO-263

Planar

500

13

3

0.38

0.49
500V

TO-220

Planar

500

13

3

0.38

0.49
200V

TO-247

Planar

200

40

3

0.052

0.07
200V

TO-263

Planar

200

40

3

0.052

0.07
200V

TO-220

Planar

200

40

3

0.052

0.07

GE65R110FAF
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R380AF
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R380AD
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R380AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R380AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R650AD
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R650AF
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R650AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R950AD
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R950AF
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE65R950AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE60R043FAL
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE60R065FAL
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE60R068FAW
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE60R090FAF
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE20N65AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE20N65AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE12N65AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE12N65AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE10N65AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE10N65AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE7N65AY
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE7N65AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE7N65AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE4N65AD
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE4N65AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE4N65AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE18N50AW
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE18N50AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE18N50AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE13N50AW
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE13N50AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE13N50AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE40N20AW
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE40N20AB
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07
GE40N20AP
- Voltage Range:
  
  200V
- Package:
  
  TO-220
- Chip Process:
  
  Planar
- VDS_max (V):
  
  200
- ID (A):
  
  40
- VTH (V):
  
  3
- RDS(ON)@VGE=10V Typ (Ω):
  
  0.052
- RDS(ON)@VGE=10V Max (Ω):
  
  0.07

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