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SiC

Silicon Carbide (SiC) power MOSFETs feature high current density, high breakdown voltage, ultra-low conduction and switching losses, and strong short-circuit withstand capability.They provide high reliability and high safety margin for various high-power applications. These products are widely used in high-efficiency power electronics fields such as new energy vehicle drive systems, solar inverters, charging piles, and server power supplies. In addition, this series adopts the TO-247-4L package with an additional Kelvin pin.By bypassing the source lead inductance in the control loop, it effectively reduces parasitic effects, further optimizes switching performance, and lowers total switching losses.

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  • Voltage Range
    • 650V
    • 1200V
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  • Package
    • TO-247-4L
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  • Chip Process
    • SiC MOS
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  • Polarity
    • N
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  • VDS_max (V)
    • 650
    • 1200
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  • ID (A)
    • 18
    • 36
    • 37
    • 65
    • 67
    • 71
    • 79
    • 152
    • 185
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  • VGS_max(V) (dynamic)
    • -10/+22
    • -10/+23
    • -10/+25
    • -8/+22
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  • VTH (V)
    • 2.7
    • 2.8
    • 2.98
    • 3
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  • RDS(ON)@15V,25℃ Typ (mΩ)
    • 14.00
    • 36.00
    • 40.00
    • 45.00
    • 60.00
    • 80.00
    • 160.00
    • -
    Reset filters
  • RDS(ON)@18V,25 ℃ Typ (mΩ)
    • 10.40
    • 14.00
    • 30.00
    • 32.00
    • 35.00
    • 40.00
    • 52.00
    • 64.00
    • 140.00
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  • RDS(ON)@18V,25 ℃ Max (mΩ)
    • 13.00
    • 20.00
    • 39.00
    • 40.00
    • 45.00
    • 46.00
    • 70.00
    • 85.00
    • 180.00
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  • RDS(ON)@18V,175℃ Typ (mΩ)
    • 21.00
    • 24.30
    • 55.00
    • 56.00
    • 57.00
    • 58.00
    • 77.00
    • 101.00
    • 215.00
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  • Ciss (pF)
    • 667.00
    • 1190.00
    • 1372.00
    • 2041.00
    • 2150.00
    • 3000.00
    • 6053.00
    • 6411.00
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  • Coss (pF)
    • 40.00
    • 88.00
    • 90.00
    • 101.00
    • 129.00
    • 140.00
    • 223.00
    • 227.00
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  • Crss (pF)
    • 3.20
    • 4.74
    • 5.00
    • 7.00
    • 7.30
    • 7.70
    • 13.00
    • 19.50
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  • Qg@Vgs= -5 V/+20 V (nC)
    • 59.00
    • 68.00
    • 71.30
    • 83.00
    • 105.00
    • 135.00
    • 208.00
    • 322.00
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  • Qgs (nC)
    • 5.50
    • 12.00
    • 16.00
    • 17.00
    • 18.70
    • 23.00
    • 36.80
    • 48.00
    • 51.00
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  • Qgd (nC)
    • 17.00
    • 21.00
    • 25.00
    • 29.00
    • 31.20
    • 33.00
    • 45.30
    • 81.00
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  • Vf (V)@标称电流 25℃
    • 3.30
    • 3.50
    • 3.70
    • 4.10
    • 4.20
    • 4.90
    • 4.96
    • 5.20
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  • Vf (V)@标称电流 175℃
    • 2.60
    • 2.90
    • 3.00
    • 3.60
    • 3.70
    • 4.00
    • 4.62
    • 4.80
    • -
    Reset filters
  • Product Name
  • Compare
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  • Voltage Range
    • 650V
    • 1200V

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  • Package
    • TO-247-4L

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  • Chip Process
    • SiC MOS

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  • Polarity
    • N

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  • VDS_max (V)
    • 650
    • 1200

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  • ID (A)
    • 18
    • 36
    • 37
    • 65
    • 67
    • 71
    • 79
    • 152
    • 185

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  • VGS_max(V) (dynamic)
    • -10/+22
    • -10/+23
    • -10/+25
    • -8/+22

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  • VTH (V)
    • 2.7
    • 2.8
    • 2.98
    • 3

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  • RDS(ON)@15V,25℃ Typ (mΩ)
    • 14.00
    • 36.00
    • 40.00
    • 45.00
    • 60.00
    • 80.00
    • 160.00
    • -

    Reset filters

  • RDS(ON)@18V,25 ℃ Typ (mΩ)
    • 10.40
    • 14.00
    • 30.00
    • 32.00
    • 35.00
    • 40.00
    • 52.00
    • 64.00
    • 140.00

    Reset filters

  • RDS(ON)@18V,25 ℃ Max (mΩ)
    • 13.00
    • 20.00
    • 39.00
    • 40.00
    • 45.00
    • 46.00
    • 70.00
    • 85.00
    • 180.00

    Reset filters

  • RDS(ON)@18V,175℃ Typ (mΩ)
    • 21.00
    • 24.30
    • 55.00
    • 56.00
    • 57.00
    • 58.00
    • 77.00
    • 101.00
    • 215.00

    Reset filters

  • Ciss (pF)
    • 667.00
    • 1190.00
    • 1372.00
    • 2041.00
    • 2150.00
    • 3000.00
    • 6053.00
    • 6411.00

    Reset filters

  • Coss (pF)
    • 40.00
    • 88.00
    • 90.00
    • 101.00
    • 129.00
    • 140.00
    • 223.00
    • 227.00

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  • Crss (pF)
    • 3.20
    • 4.74
    • 5.00
    • 7.00
    • 7.30
    • 7.70
    • 13.00
    • 19.50

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  • Qg@Vgs= -5 V/+20 V (nC)
    • 59.00
    • 68.00
    • 71.30
    • 83.00
    • 105.00
    • 135.00
    • 208.00
    • 322.00

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  • Qgs (nC)
    • 5.50
    • 12.00
    • 16.00
    • 17.00
    • 18.70
    • 23.00
    • 36.80
    • 48.00
    • 51.00

    Reset filters

  • Qgd (nC)
    • 17.00
    • 21.00
    • 25.00
    • 29.00
    • 31.20
    • 33.00
    • 45.30
    • 81.00

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  • Vf (V)@标称电流 25℃
    • 3.30
    • 3.50
    • 3.70
    • 4.10
    • 4.20
    • 4.90
    • 4.96
    • 5.20

    Reset filters

  • Vf (V)@标称电流 175℃
    • 2.60
    • 2.90
    • 3.00
    • 3.60
    • 3.70
    • 4.00
    • 4.62
    • 4.80
    • -

    Reset filters

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    185

    -8/+22

    2.98

    12.30

    10.40

    13.00

    24.30

    6411.00

    227.00

    4.74

    208.00

    48.00

    25.00

    4.96

    4.62

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    152

    -10/+22

    2.7

    14.00

    14.00

    20.00

    21.00

    6053.00

    223.00

    5.00

    322.00

    51.00

    81.00

    5.20

    -

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    79

    -10/+23

    2.8

    36.00

    30.00

    39.00

    55.00

    3000.00

    140.00

    7.70

    135.00

    36.80

    45.30

    4.20

    4.00

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    65

    -8/+22

    2.8

    -

    40.00

    45.00

    58.00

    2041.00

    101.00

    7.00

    71.30

    18.70

    31.20

    4.10

    3.60

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    65

    -8/+22

    2.8

    -

    40.00

    45.00

    58.00

    2041.00

    101.00

    7.00

    71.30

    18.70

    31.20

    4.10

    3.60

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    67

    -10/+23

    2.8

    45.00

    35.00

    46.00

    57.00

    2150.00

    90.00

    3.20

    83.00

    23.00

    21.00

    4.90

    4.80

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    36

    -10/+25

    3

    -

    80.00

    -

    -

    1372.00

    88.00

    19.50

    105.00

    17.00

    33.00

    3.50

    3.00

  • 1200V

    TO-247-4L

    SiC MOS

    N

    1200

    18

    -10/+25

    3

    -

    160.00

    -

    -

    667.00

    40.00

    7.30

    59.00

    5.50

    21.00

    3.70

    2.90

  • 650V

    TO-247-4L

    SiC MOS

    N

    650

    37

    -10/+25

    3

    -

    60.00

    -

    -

    1190.00

    129.00

    13.00

    68.00

    16.00

    17.00

    3.30

    2.60

  • GE130C120SW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GE140C120KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GE300C120KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GER04C120SW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GER04C120KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GE350C120SW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GER08C120KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GER16C120KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

  • GER06C65KW
    • Voltage Range:

      650V

    • Package:

      TO-247-4L

    • Chip Process:

      SiC MOS

    • Polarity:

      N

    • VDS_max (V):

      650

    • ID (A):

      37

    • VGS_max(V) (dynamic):

      -10/+25

    • VTH (V):

      3

    • RDS(ON)@15V,25℃ Typ (mΩ):

      -

    • RDS(ON)@18V,25 ℃ Typ (mΩ):

      60.00

    • RDS(ON)@18V,25 ℃ Max (mΩ):

      -

    • RDS(ON)@18V,175℃ Typ (mΩ):

      -

    • Ciss (pF):

      1190.00

    • Coss (pF):

      129.00

    • Crss (pF):

      13.00

    • Qg@Vgs= -5 V/+20 V (nC):

      68.00

    • Qgs (nC):

      16.00

    • Qgd (nC):

      17.00

    • Vf (V)@标称电流 25℃:

      3.30

    • Vf (V)@标称电流 175℃:

      2.60

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