GS11NFB12H1D4
H1 SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 1400 |
| Technology | 平面SiC MOS |
| Configruation | 全桥 Full Bridge |
| Features | Elliptical Substrat |
| VCE (sat)(V) | 1.1mΩ |
| RthJC (K/W) | 0.09 |
| Packages | H1 |
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