GE40N20AB
| Voltage Range | 200V |
| Package | TO-263 |
| Chip Process | Planar |
VDS_max(V) | 200 |
ID(A) | 40 |
VTH(V) | 3 |
| RDS(ON)@VGE=10V Typ (mΩ) | 0.052 |
| RDS(ON)@VGE=10V Max (mΩ) | 0.07 |
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