GE10N65AB
| Voltage Range | 650V |
| Package | TO-263 |
| Chip Process | Planar |
VDS_max(V) | 650 |
ID(A) | 10 |
VTH(V) | 3.7 |
| RDS(ON)@VGE=10V Typ (mΩ) | 0.8 |
| RDS(ON)@VGE=10V Max (mΩ) | 1 |
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