GE4N65AB
| Voltage Range | 650V |
| Package | TO-263 |
| Chip Process | Planar |
VDS_max(V) | 650 |
ID(A) | 4 |
VTH(V) | 3.4 |
| RDS(ON)@VGE=10V Typ (mΩ) | 2.3 |
| RDS(ON)@VGE=10V Max (mΩ) | 2.6 |
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