Jingneng Si-based single-switch module M2 successfully prototyped

Recently, Jingneng has successfully trial-produced its new high-performance automotive-grade molded power module M2. This is a high-current-density single-switch module, primarily designed for traction inverters in next-generation electric vehicles.

M2模块应力仿真

The M2 module delivers outstanding overall performance, including:

Features the company’s self-developed 7th-generation (micro-groove gate + field-stop) IGBT chip, with significantly reduced switching loss and greatly improved system efficiency.Adopts Si3N4 insulated ceramic substrate and Direct Lead Bonding (DLB) technology, delivering low parasitic parameters and thermal resistance, and significantly enhancing current capability.Optimized structural design based on finite element stress simulation achieves stress relaxation and greatly improves bonding strength.Utilizes a single-step soldering process inside the module, drastically lowering manufacturing costs.Employs specialized high-temperature-resistant solder and molding compound, enabling higher soldering temperature resistance. This ensures high reliability and strong robustness at the application end, providing customers with a wider process window for system soldering or sintering.

Stress Simulation of M2 Module

At present, Jingneng has completed the development of a wide range of products for vehicle electrical architectures including 400V and 800V, covering Si- and SiC-based full-bridge, half-bridge, single-chip and single-switch modules. The company has established comprehensive manufacturing capabilities and a strict quality system.

Jingneng adheres to scene-driven and application-oriented development, continuously refining its technologies to provide customers with customized and leading power semiconductor products.