GS28NHB12M4B7
M4B SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 440 |
| Technology | 平面SiC MOS |
| Configruation | 半桥 Half Bridge |
| Features | / |
| VCE (sat)(V) | 2.8mΩ |
| RthJC (K/W) | / |
| Packages | M4B |
应用领域
M4B SiC 1200V
| VCES (V)+D1:K1 | 1200 |
| IC (A) | 440 |
| Technology | 平面SiC MOS |
| Configruation | 半桥 Half Bridge |
| Features | / |
| VCE (sat)(V) | 2.8mΩ |
| RthJC (K/W) | / |
| Packages | M4B |
