GS28SFB08H8C4LM
H8C SiC 750V
| VCES (V)+D1:K1 | 750 |
| IC (A) | 390 |
| Technology | 沟槽SiC MOS |
| Configruation | 全桥 Full Bridge |
| Features | 椭圆基板 |
| VCE (sat)(V) | 2.8mΩ |
| RthJC (K/W) | |
| Packages | H8 |
应用领域
H8C SiC 750V
| VCES (V)+D1:K1 | 750 |
| IC (A) | 390 |
| Technology | 沟槽SiC MOS |
| Configruation | 全桥 Full Bridge |
| Features | 椭圆基板 |
| VCE (sat)(V) | 2.8mΩ |
| RthJC (K/W) | |
| Packages | H8 |
