GE130C120SW
| Voltage Range | 1200V |
| Package | TO-247-4L |
| Chip Process | SiC MOS |
| Polarity | N |
VDS_max(V) | 1200 |
ID(A) | 185 |
VGS_max(V) (dynamic) | -8/+22 |
VTH(V) | 2.98 |
| RDS(ON)@15V,25 ℃,Typ (mΩ) | 12.30 |
| RDS(ON)@18V,25 ℃,Typ (mΩ) | 10.40 |
| RDS(ON)@18V,25 ℃,Max (mΩ) | 13.00 |
| RDS(ON)@18V,175℃,Typ (mΩ) | 24.30 |
| Ciss (pF) | 6411.00 |
| Coss (pF) | 227.00 |
| Crss (pF) | 4.74 |
Qg@Vgs= -5 V/+20 V (nC) | 208.00 |
| Qgs (nC) | 48.00 |
| Qgd (nC) | 25.00 |
| Vf (V)@标称电流 25℃ | 4.96 |
| Vf (V)@标称电流 175℃ | 4.62 |
