GER04C120KW
| Voltage Range | 1200V |
| Package | TO-247-4L |
| Chip Process | SiC MOS |
| Polarity | N |
VDS_max(V) | 1200 |
ID(A) | 65 |
VGS_max(V) (dynamic) | -8/+22 |
VTH(V) | 2.8 |
| RDS(ON)@15V,25℃,Typ (mΩ) | - |
| RDS(ON)@18V,25 ℃,Typ (mΩ) | 40.00 |
| RDS(ON)@18V,25 ℃,Max (mΩ) | 45.00 |
| RDS(ON)@18V,175℃,Typ (mΩ) | 58.00 |
| Ciss (pF) | 2041.00 |
| Coss (pF) | 101.00 |
| Crss (pF) | 7.00 |
Qg@Vgs= -5 V/+20 V (nC) | 71.30 |
| Qgs (nC) | 18.70 |
| Qgd (nC) | 31.20 |
| Vf (V)@标称电流 25℃ | 4.10 |
| Vf (V)@标称电流 175℃ | 3.60 |
