GE350C120SW
| Voltage Range | 1200V |
| Package | TO-247-4L |
| Chip Process | SiC MOS |
| Polarity | N |
VDS_max(V) | 1200 |
ID(A) | 67 |
VGS_max(V) (dynamic) | -10/+23 |
VTH(V) | 2.8 |
| RDS(ON)@15V,25℃,Typ (mΩ) | 45.00 |
| RDS(ON)@18V,25 ℃,Typ (mΩ) | 35.00 |
| RDS(ON)@18V,25 ℃,Max (mΩ) | 46.00 |
| RDS(ON)@18V,175℃,Typ (mΩ) | 57.00 |
| Ciss (pF) | 2150.00 |
| Coss (pF) | 90.00 |
| Crss (pF) | 3.20 |
Qg@Vgs= -5 V/+20 V (nC) | 83.00 |
| Qgs (nC) | 23.00 |
| Qgd (nC) | 21.00 |
| Vf (V)@标称电流 25℃ | 4.90 |
| Vf (V)@标称电流 175℃ | 4.80 |
应用领域
