GER06C65KW
| Voltage Range | 650V |
| Package | TO-247-4L |
| Chip Process | SiC MOS |
| Polarity | N |
VDS_max(V) | 650 |
ID(A) | 37 |
VGS_max(V) (dynamic) | -10/+25 |
VTH(V) | 3 |
| RDS(ON)@15V,25℃,Typ (mΩ) | - |
| RDS(ON)@18V,25℃,Typ (mΩ) | 60.00 |
| RDS(ON)@18V,25℃,Max (mΩ) | - |
| RDS(ON)@18V,175℃,Typ (mΩ) | - |
| Ciss (pF) | 1190.00 |
| Coss (pF) | 129.00 |
| Crss (pF) | 13.00 |
Qg@Vgs= -5 V/+20 V (nC) | 68.00 |
| Qgs (nC) | 16.00 |
| Qgd (nC) | 17.00 |
| Vf (V)@标称电流 25℃ | 3.30 |
| Vf (V)@标称电流 175℃ | 2.60 |
